IXGR55N120A3H1
IGBT 1200V 70A 200W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS GenX3™ IXGR55N120A3H1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 70A, with a pulsed capability up to 330A. The IGBT exhibits a low on-state voltage of 2.35V at 15V gate-emitter voltage and 55A collector current, contributing to efficient power handling with a maximum power dissipation of 200W. Switching characteristics include typical turn-on delay of 23ns and turn-off delay of 365ns at 25°C, with associated switching energies of 5.1mJ for turn-on and 13.3mJ for turn-off. The IXGR55N120A3H1 is housed in an ISOPLUS247™ package, facilitating through-hole mounting and thermal management. Its robust design and operating temperature range of -55°C to 150°C make it suitable for industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 55A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 23ns/365ns |
| Switching Energy | 5.1mJ (on), 13.3mJ (off) |
| Test Condition | 960V, 55A, 3Ohm, 15V |
| Gate Charge | 185 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 330 A |
| Power - Max | 200 W |
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