IXGR50N60BD1
IGBT 600V 75A 250W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGR50N60BD1 is a HiPerFAST™ Series Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 200A. Its low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 50A collector current, combined with a low switching energy of 3mJ (off), contributes to reduced power dissipation. The device boasts a typical gate charge of 110 nC and exhibits turn-on and turn-off delays of 50ns and 110ns respectively at 25°C. Packaged in the ISOPLUS247™ through-hole configuration, it operates across a wide temperature range of -55°C to 150°C. This IGBT is suitable for use in industrial motor drives, solar inverters, and uninterruptible power supplies.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/110ns |
| Switching Energy | 3mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 250 W |
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