IXGR50N60B2
IGBT 600V 68A 200W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IXGR50N60B2 is a 600V, 68A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. This through-hole component features a maximum collector power dissipation of 200W and a pulsed collector current capability of 300A. The Vce(on) is rated at 2.2V at 15V gate voltage and 40A collector current, with a typical gate charge of 140 nC. Switching characteristics include a turn-on delay of 18ns and a turn-off delay of 190ns at 25°C, with a switching energy of 550µJ (off) under test conditions of 480V, 40A, 5 Ohm, and 15V. Operated within a temperature range of -55°C to 150°C (TJ), the IXGR50N60B2 is housed in an ISOPLUS247™ package. This device is suitable for use in power supply, motor control, and industrial applications.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | 18ns/190ns |
| Switching Energy | 550µJ (off) |
| Test Condition | 480V, 40A, 5Ohm, 15V |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 68 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 200 W |
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