IXGR50N60B
IGBT 600V 75A 250W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IXGR50N60B is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Featuring a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 75 A (200 A pulsed), this device excels in high-power density designs. The IXGR50N60B boasts a maximum power dissipation of 250 W, with a typical on-state voltage (Vce(on)) of 2.5 V at 15 V gate drive and 50 A collector current. Its switching characteristics include a turn-off switching energy of 3 mJ and typical turn-on/turn-off delays of 50 ns/110 ns at 25°C. The component utilizes a standard input type and is housed in an ISOPLUS247™ package for through-hole mounting, ensuring robust thermal management. This IGBT is suitable for use in industrial motor drives, welding equipment, and uninterruptible power supplies (UPS).
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 50A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/110ns |
| Switching Energy | 3mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 250 W |
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