IXGR50N60A2U1
IGBT 600V 75A 200W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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IXYS IGBT IXGR50N60A2U1 is a 600V, 75A Insulated Gate Bipolar Transistor designed for high-power switching applications. This device features a 200W continuous collector current capability and a pulsed collector current rating of 200A. The Vce(on) is specified at 1.7V maximum at 15V gate-emitter voltage and 50A collector current, with a gate charge of 140 nC. It offers fast switching characteristics, with typical on-delay of 20ns and off-delay of 410ns at 25°C, and a switching energy of 3.5mJ (off) under test conditions of 480V, 50A, 5 Ohm, 15V. The IXGR50N60A2U1 utilizes the ISOPLUS247™ package for through-hole mounting, providing robust thermal management. This component is suitable for use in power supplies, motor control, and industrial applications requiring high voltage and current handling. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 50A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 20ns/410ns |
| Switching Energy | 3.5mJ (off) |
| Test Condition | 480V, 50A, 5Ohm, 15V |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 200 W |
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