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IXGR48N60B3D1

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IXGR48N60B3D1

IGBT 600V 60A 150W ISOPLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGR48N60B3D1 is a 600V, 60A Insulated Gate Bipolar Transistor (IGBT) from the GenX3™ series. This PT IGBT features a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 40A collector current. With a maximum power dissipation of 150W and a pulsed collector current capability of 280A, it is designed for high-efficiency switching applications. The device offers a gate charge of 115 nC and switching energy figures of 840µJ (turn-on) and 660µJ (turn-off) at the specified test conditions (480V, 30A, 5 Ohm, 15V). The IXGR48N60B3D1 utilizes the ISOPLUS247™ package for through-hole mounting, providing a robust thermal and electrical interface. Operating temperature range is -55°C to 150°C. This component is commonly found in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)100 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 40A
Supplier Device PackageISOPLUS247™
IGBT TypePT
Td (on/off) @ 25°C22ns/130ns
Switching Energy840µJ (on), 660µJ (off)
Test Condition480V, 30A, 5Ohm, 15V
Gate Charge115 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)280 A
Power - Max150 W

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