IXGR40N60CD1
IGBT 600V 75A 200W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGR40N60CD1 is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This PT IGBT features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 75A, with a pulsed capability of 150A. The device exhibits a low on-state voltage of 2.7V at 15V Vge and 40A Ic, supported by a gate charge of 116 nC. Its fast switching characteristics are evidenced by a typical off-time of 100ns and a reverse recovery time of 3.5 ns. With a maximum power dissipation of 200W and an operating temperature range of -55°C to 150°C, the IXGR40N60CD1 is suitable for demanding applications across industrial power supplies, motor control, and renewable energy systems. This component is supplied in the ISOPLUS247™ through-hole package.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 3.5 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 25ns/100ns |
| Switching Energy | 850µJ (off) |
| Test Condition | 480V, 40A, 4.7Ohm, 15V |
| Gate Charge | 116 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 200 W |
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