IXGR40N60C2
IGBT 600V 56A 170W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGR40N60C2 is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This PT IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 56A, with a pulsed current capability of 200A. The device exhibits a low on-state voltage of 2.7V at 15V gate-emitter voltage and 30A collector current, with a maximum power dissipation of 170W. Key switching characteristics include a gate charge of 95 nC and typical turn-off switching energy of 200µJ under specified test conditions (400V, 30A, 3 Ohm, 15V). The IXGR40N60C2 is housed in an ISOPLUS247™ package with a through-hole mounting type, suitable for demanding industrial and power electronics systems. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/90ns |
| Switching Energy | 200µJ (off) |
| Test Condition | 400V, 30A, 3Ohm, 15V |
| Gate Charge | 95 nC |
| Current - Collector (Ic) (Max) | 56 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 170 W |
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