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IXGR40N60C

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IXGR40N60C

IGBT 600V 75A 200W ISOPLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS HiPerFAST™ IGBT, part number IXGR40N60C, is a 600V, 75A insulated gate bipolar transistor designed for high-efficiency switching applications. This component features a maximum collector current of 75A and a pulsed collector current of 150A, with a low on-state voltage (Vce(on)) of 2.7V at 15V Gate-Emitter and 40A Collector Current. The power dissipation is rated at 200W, and it exhibits switching characteristics with typical turn-on delay (Td(on)) of 25ns and turn-off delay (Td(off)) of 100ns at 25°C. The device has a gate charge of 116 nC and a switching energy of 850µJ (off) under test conditions of 480V, 40A, 4.7 Ohm, and 15V. The IXGR40N60C is housed in an ISOPLUS247™ package, facilitating through-hole mounting and suitable for operating temperatures from -55°C to 150°C. This IGBT is utilized in power conversion systems, industrial motor drives, and high-voltage power supplies.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 40A
Supplier Device PackageISOPLUS247™
IGBT Type-
Td (on/off) @ 25°C25ns/100ns
Switching Energy850µJ (off)
Test Condition480V, 40A, 4.7Ohm, 15V
Gate Charge116 nC
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A
Power - Max200 W

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