IXGR40N60B2
IGBT 600V 60A 167W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGR40N60B2 is a HiPerFAST™ Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 60A, with a pulsed current rating of 200A. The IGBT Type is PT, and it offers a low on-state voltage of 1.9V at 15V gate-emitter voltage and 30A collector current. With a maximum power dissipation of 167W and a gate charge of 100 nC, the IXGR40N60B2 exhibits typical turn-on and turn-off delays of 18ns and 130ns respectively at 25°C. Its robust construction, housed in an ISOPLUS247™ package, supports through-hole mounting and an operating temperature range of -55°C to 150°C. This component is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/130ns |
| Switching Energy | 400µJ (off) |
| Test Condition | 400V, 30A, 3.3Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 167 W |
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