IXGR39N60BD1
IGBT 600V 66A 140W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGR39N60BD1 is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This through-hole component offers a 600V collector-emitter breakdown voltage and a continuous collector current rating of 66A, with a pulsed capability of 152A. It features a maximum power dissipation of 140W and a low on-state voltage of 1.8V at 15V gate-emitter voltage and 39A collector current. The device exhibits a typical gate charge of 125 nC and a reverse recovery time of 25 ns. Switching energy is rated at 4mJ (off) with typical turn-on and turn-off delays of 25ns and 250ns respectively, tested at 480V and 4.7 Ohms with a 15V gate drive. The IXGR39N60BD1 is housed in an ISOPLUS247™ package, suitable for applications in industrial motor drives, power supplies, and renewable energy systems. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 39A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/250ns |
| Switching Energy | 4mJ (off) |
| Test Condition | 480V, 4.7Ohm, 15V |
| Gate Charge | 125 nC |
| Current - Collector (Ic) (Max) | 66 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 152 A |
| Power - Max | 140 W |
Request a Quote
Clients Also Buy
IXGH50N90B2D1
IGBT PT 900V 75A TO247AD
IXGH50N90B2
IGBT 900V 75A 400W TO247
IXGH24N60A
IGBT 600V 48A 150W TO247AD
