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IXGR39N60B

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IXGR39N60B

IGBT 600V 66A 140W ISOPLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGR39N60B is a HiPerFAST™ Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This through-hole component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 66A, with a pulsed capability of 152A. The device exhibits a low on-state voltage of 1.8V at 15V gate-emitter voltage and 39A collector current. With a maximum power dissipation of 140W and a gate charge of 125 nC, the IXGR39N60B offers efficient switching characteristics, indicated by typical turn-off switching energy of 4mJ. The ISOPLUS247™ package provides robust thermal management for demanding operating conditions ranging from -55°C to 150°C. This IGBT is suitable for applications in industrial motor control, power supplies, and renewable energy systems.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 39A
Supplier Device PackageISOPLUS247™
IGBT Type-
Td (on/off) @ 25°C25ns/250ns
Switching Energy4mJ (off)
Test Condition480V, 4.7Ohm, 15V
Gate Charge125 nC
Current - Collector (Ic) (Max)66 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)152 A
Power - Max140 W

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