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IXGR24N60CD1

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IXGR24N60CD1

IGBT 600V 42A 80W ISOPLUS247

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS HiPerFAST™ IXGR24N60CD1 is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a continuous collector current of 42A and a pulsed current capability of 80A, with a maximum power dissipation of 80W. Key electrical characteristics include a Vce(on) of 2.5V at 15V gate-emitter voltage and 24A collector current, and a gate charge of 55 nC. The device exhibits a typical switching energy of 240µJ (off) under test conditions of 480V, 24A, 18 Ohm, and 15V, with turn-on and turn-off delays of 15ns and 75ns respectively at 25°C. It operates within an extended temperature range of -55°C to 150°C (TJ). The IXGR24N60CD1 is housed in a TO-247-3 package, specifically the ISOPLUS247™ variant, facilitating through-hole mounting. This IGBT is well-suited for power factor correction circuits, industrial motor drives, and uninterruptible power supplies.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)25 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 24A
Supplier Device PackageISOPLUS247™
IGBT Type-
Td (on/off) @ 25°C15ns/75ns
Switching Energy240µJ (off)
Test Condition480V, 24A, 18Ohm, 15V
Gate Charge55 nC
Current - Collector (Ic) (Max)42 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max80 W

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