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IXGR24N120C3D1

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IXGR24N120C3D1

IGBT 1200V 48A 200W ISOPLUS247

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS GenX3™ IXGR24N120C3D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This PT IGBT features a 1200V collector-emitter breakdown voltage and a continuous collector current of 48A, with a pulsed capability of 96A. It offers a maximum power dissipation of 200W and a low on-state voltage (Vce(on)) of 4.2V at 15V gate-emitter voltage and 20A collector current, achieved under specific test conditions (600V, 20A, 5 Ohm, 15V). The device exhibits characteristic switching times of 16ns turn-on and 93ns turn-off at 25°C, with a switching energy of 1.37mJ (on) and 470µJ (off). The IXGR24N120C3D1 is housed in an ISOPLUS247™ package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). Its robust construction and electrical characteristics make it suitable for use in industrial motor drives, power factor correction, and uninterruptible power supplies.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)220 ns
Vce(on) (Max) @ Vge, Ic4.2V @ 15V, 20A
Supplier Device PackageISOPLUS247™
IGBT TypePT
Td (on/off) @ 25°C16ns/93ns
Switching Energy1.37mJ (on), 470µJ (off)
Test Condition600V, 20A, 5Ohm, 15V
Gate Charge79 nC
Current - Collector (Ic) (Max)48 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)96 A
Power - Max200 W

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