IXGR16N170AH1
IGBT 1700V 16A 120W ISOPLUS247Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGR16N170AH1 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power conversion applications. This component features a 1700V collector-emitter breakdown voltage and a continuous collector current rating of 16A, with a pulsed capability of 40A. The device exhibits a low on-state voltage (Vce(on)) of 5V at 15V gate-emitter voltage and 8A collector current, and a power dissipation of 120W.
Optimized for efficient switching, the IXGR16N170AH1 offers typical turn-on and turn-off delays of 36ns and 200ns respectively, with a switching energy of 900µJ (off) under test conditions of 850V, 16A, 10 Ohm, and 15V. The gate charge is specified at 65nC. Packaged in an ISOPLUS247™ through-hole configuration, this IGBT is suitable for operation across a wide temperature range of -55°C to 150°C (TJ). It finds application in power factor correction, induction heating, and high-voltage DC-DC converters. This part is supplied in tubes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 150 ns |
| Vce(on) (Max) @ Vge, Ic | 5V @ 15V, 8A |
| Supplier Device Package | ISOPLUS247™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | 36ns/200ns |
| Switching Energy | 900µJ (off) |
| Test Condition | 850V, 16A, 10Ohm, 15V |
| Gate Charge | 65 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 120 W |
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