IXGQ85N33PCD1
IGBT 330V 85A 150W TO3PManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS IXGQ85N33PCD1 is a Polar™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 330V collector-emitter breakdown voltage and a continuous collector current capability of 85A, with a maximum power dissipation of 150W. The Vce(on) is specified at 3V under a gate-source voltage of 15V and a collector current of 100A. With a gate charge of 80 nC and a reverse recovery time of 250 ns, this IGBT is suitable for demanding applications. It is housed in a TO-3P-3, SC-65-3 package for through-hole mounting and operates across a wide junction temperature range of -55°C to 150°C. This device finds application in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: Polar™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 250 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 100A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 80 nC |
| Current - Collector (Ic) (Max) | 85 A |
| Voltage - Collector Emitter Breakdown (Max) | 330 V |
| Power - Max | 150 W |
Request a Quote
Clients Also Buy
MMIX1T132N50P3
MOSFET N-CH 500V 63A POLAR3
IXTY2N60P
MOSFET N-CH 600V 2A TO252
IXTP2N60P
MOSFET N-CH 600V 2A TO220AB
