IXGQ50N60C4D1
IGBT 600V 90A 300W TO3PManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGQ50N60C4D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 90A, with a pulsed capability of 220A. The PT IGBT configuration offers a low on-state voltage of 2.3V at 15V gate-emitter voltage and 36A collector current, minimizing conduction losses. Optimized switching characteristics are demonstrated by a typical turn-on delay of 40ns and turn-off delay of 270ns at 25°C, with associated switching energies of 950µJ (on) and 840µJ (off) under specified test conditions. The device supports a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-3P-3 (SC-65-3) through-hole format, the IXGQ50N60C4D1 is suitable for use in industrial motor drives, power supplies, and uninterruptible power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 36A |
| Supplier Device Package | TO-3P |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 40ns/270ns |
| Switching Energy | 950µJ (on), 840µJ (off) |
| Test Condition | 400V, 36A, 10Ohm, 15V |
| Gate Charge | 113 nC |
| Current - Collector (Ic) (Max) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 220 A |
| Power - Max | 300 W |
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