IXGP8N100
IGBT 1000V 16A 54W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGP8N100 is a high-voltage, N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component offers a robust 1000V collector-emitter breakdown voltage and a continuous 16A collector current, with a pulsed capability of 32A. The IXGP8N100 features a low on-state voltage of 2.7V at 15V gate-emitter voltage and 8A collector current, ensuring efficient power transfer. Its typical switching characteristics include a gate charge of 26.5 nC and an off-state switching energy of 2.3 mJ at 800V and 8A. The device operates within an extended temperature range of -55°C to 150°C. Packaged in a standard TO-220-3 through-hole configuration, this IGBT is suitable for power supplies, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 8A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 15ns/600ns |
| Switching Energy | 2.3mJ (off) |
| Test Condition | 800V, 8A, 120Ohm, 15V |
| Gate Charge | 26.5 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 32 A |
| Power - Max | 54 W |
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