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IXGP7N60C

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IXGP7N60C

IGBT 600V 14A 54W TO220

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGP7N60C is a HiPerFAST™, Lightspeed™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current of 14 A, with a pulsed capability of 30 A. With a maximum power dissipation of 54 W and a low on-state voltage of 2.7V at 15V Vge and 7A Ic, it offers efficient power handling. The device exhibits typical turn-on and turn-off times of 9 ns and 65 ns respectively, with associated switching energies of 70 µJ (on) and 120 µJ (off) under test conditions of 480V, 7A, 22 Ohm, 15V. Its gate charge is rated at 25 nC. The IXGP7N60C is housed in a TO-220-3 package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in power supply, industrial motor control, and lighting applications.

Additional Information

Series: HiPerFAST™, Lightspeed™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 7A
Supplier Device PackageTO-220-3
IGBT Type-
Td (on/off) @ 25°C9ns/65ns
Switching Energy70µJ (on), 120µJ (off)
Test Condition480V, 7A, 22Ohm, 15V
Gate Charge25 nC
Current - Collector (Ic) (Max)14 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)30 A
Power - Max54 W

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