IXGP48N60A3
IGBT PT 600V 120A TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGP48N60A3 is a 600V, 120A insulated gate bipolar transistor (IGBT) designed for high-power switching applications. This PT-type IGBT features a maximum collector current of 120A and a pulsed collector current of 300A, with a continuous power dissipation rating of 300W. The device exhibits a low on-state voltage (Vce(on)) of 1.35V at 15V gate-emitter voltage and 32A collector current. Key dynamic characteristics include a gate charge of 110 nC, a reverse recovery time (trr) of 30 ns, and switching energies of 950µJ (on) and 2.9mJ (off) under the specified test conditions of 480V, 32A, 5 Ohm, and 15V. Operating across a temperature range of -55°C to 150°C, it is housed in a standard TO-220-3 package for through-hole mounting. This component is suitable for use in industrial automation and power supply applications.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 1.35V @ 15V, 32A |
| Supplier Device Package | TO-220 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 25ns/334ns |
| Switching Energy | 950µJ (on), 2.9mJ (off) |
| Test Condition | 480V, 32A, 5Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 300 W |
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