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IXGP36N60A3

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IXGP36N60A3

IGBT

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGP36N60A3 is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, housed in a TO-220-3 package, offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 30A at 15V gate-emitter voltage, with a pulsed collector current of 200A. The IGBT features a maximum power dissipation of 220W and a low on-state voltage of 1.4V at the specified test conditions. Key switching characteristics include a gate charge of 80 nC and switching energies of 740µJ (turn-on) and 3mJ (turn-off), with turn-on and turn-off delays of 18ns and 330ns respectively at 25°C. Operating across a temperature range of -55°C to 150°C, this device is suitable for demanding applications in industrial motor drives and power supply sectors.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)23 ns
Vce(on) (Max) @ Vge, Ic1.4V @ 15V, 30A
Supplier Device PackageTO-220-3
IGBT TypePT
Td (on/off) @ 25°C18ns/330ns
Switching Energy740µJ (on), 3mJ (off)
Test Condition400V, 30A, 5Ohm, 15V
Gate Charge80 nC
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)200 A
Power - Max220 W

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