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IXGP30N60C3D4

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IXGP30N60C3D4

IGBT 600V 60A 220W TO220AB

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS GenX3™ IXGP30N60C3D4 is a 600V, 60A insulated gate bipolar transistor (IGBT) designed for high-efficiency power switching applications. This PT IGBT features a low collector-emitter saturation voltage (Vce(on)) of 3V at 15V gate-emitter voltage (Vge) and 20A collector current (Ic). With a maximum power dissipation of 220W and a collector current pulsed capability of 150A, it is suitable for demanding power control circuits. Key performance parameters include a typical gate charge of 38 nC and switching energies of 270µJ (on) and 90µJ (off) under specified test conditions (300V, 20A, 5 Ohm, 15V). The device offers a fast switching speed with turn-on delay (Td(on)) of 16ns and turn-off delay (Td(off)) of 42ns at 25°C. Its robust design includes a reverse recovery time (trr) of 60 ns. Packaged in a TO-220-3 through-hole configuration, this IGBT operates across a wide temperature range of -55°C to 150°C. It finds application in power supplies, motor control, and industrial power conversion systems.

Additional Information

Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)60 ns
Vce(on) (Max) @ Vge, Ic3V @ 15V, 20A
Supplier Device PackageTO-220-3
IGBT TypePT
Td (on/off) @ 25°C16ns/42ns
Switching Energy270µJ (on), 90µJ (off)
Test Condition300V, 20A, 5Ohm, 15V
Gate Charge38 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A
Power - Max220 W

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