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IXGP30N60B4D1

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IXGP30N60B4D1

IGBT 600V 56A 190W TO220

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGP30N60B4D1 is a 600V, 56A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This PT IGBT features a maximum collector current of 56A (156A pulsed) and a low on-state voltage of 1.7V at 15V gate-emitter voltage and 24A collector current. With a maximum power dissipation of 190W, it is suitable for demanding industrial and automotive power conversion systems. The device boasts a gate charge of 77nC and exhibits typical switching times of 21ns turn-on and 200ns turn-off at 25°C, with switching energy figures of 440µJ (on) and 700µJ (off) under specified test conditions. The IXGP30N60B4D1 is packaged in a standard TO-220-3 through-hole configuration, operating across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)30 ns
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 24A
Supplier Device PackageTO-220-3
IGBT TypePT
Td (on/off) @ 25°C21ns/200ns
Switching Energy440µJ (on), 700µJ (off)
Test Condition400V, 24A, 10Ohm, 15V
Gate Charge77 nC
Current - Collector (Ic) (Max)56 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)156 A
Power - Max190 W

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