IXGP30N120B3
IGBT PT 1200V 60A TO220-3Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGP30N120B3 is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 60 A, with a pulsed current capability of 150 A. The IGBT Type is PT, offering standard input characteristics. With a maximum power dissipation of 300 W and a collector-emitter saturation voltage (Vce(on)) of 3.5 V at 15 V gate-emitter voltage and 30 A collector current, this component is suitable for demanding power conversion circuits. Key switching parameters include a gate charge of 87 nC and typical switching energies of 3.47 mJ (turn-on) and 2.16 mJ (turn-off) at 960 V, 30 A, 5 Ohm, and 15 V. The IXGP30N120B3 is packaged in a TO-220-3 configuration for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component finds application in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 30A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/127ns |
| Switching Energy | 3.47mJ (on), 2.16mJ (off) |
| Test Condition | 960V, 30A, 5Ohm, 15V |
| Gate Charge | 87 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 300 W |
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