The IXYS IXGP28N60A3 is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This through-hole component, housed in a TO-220-3 package, offers a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 75 A, with a pulsed capability of 170 A. It features a low on-state voltage of 1.4 V at 15 V gate-emitter voltage and 24 A collector current, with a maximum power dissipation of 190 W. Key switching characteristics include a gate charge of 66 nC, a reverse recovery time of 26 ns, and switching energy figures of 700 µJ (on) and 2.4 mJ (off) under specified test conditions. Operating across an extended temperature range of -55°C to 150°C, this IGBT is suitable for use in industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 26 ns |
| Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 24A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/300ns |
| Switching Energy | 700µJ (on), 2.4mJ (off) |
| Test Condition | 480V, 24A, 10Ohm, 15V |
| Gate Charge | 66 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 170 A |
| Power - Max | 190 W |
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