IXGP20N60B
IGBT 600V 40A 150W TO220ABManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGP20N60B is a HiPerFAST™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This device offers a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed current capability of 80 A. It dissipates up to 150 W with a low on-state voltage of 2V at 15V gate-emitter voltage and 20A collector current. Key switching characteristics include a gate charge of 90 nC and typical on/off switching times of 15 ns/150 ns at 25°C, with associated switching energies of 150 µJ (on) and 700 µJ (off) under the specified test conditions. The IXGP20N60B is housed in a TO-220-3 package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. This component is frequently utilized in power factor correction, induction heating, and uninterruptible power supply systems.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/150ns |
| Switching Energy | 150µJ (on), 700µJ (off) |
| Test Condition | 480V, 20A, 10Ohm, 15V |
| Gate Charge | 90 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 150 W |
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