IXGP20N120B3
IGBT 1200V 36A 180W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXGP20N120B3 from IXYS is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component features a collector-emitter breakdown voltage of 1200V and a continuous collector current capability of 36A, with a pulsed capability of 80A. The device offers a low on-state voltage (Vce(on)) of 3.1V at 15V gate-source voltage and 16A collector current, minimizing conduction losses. With a maximum power dissipation of 180W and switching energies of 920µJ (turn-on) and 560µJ (turn-off) under specified test conditions (600V, 16A, 15 Ohm, 15V), it is suitable for applications requiring efficient power handling. The TO-220-3 package with through-hole mounting facilitates integration into various board designs. Operating across a temperature range of -55°C to 150°C, this IGBT is utilized in industries such as industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 16A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/150ns |
| Switching Energy | 920µJ (on), 560µJ (off) |
| Test Condition | 600V, 16A, 15Ohm, 15V |
| Gate Charge | 51 nC |
| Current - Collector (Ic) (Max) | 36 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 180 W |
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