IXGP20N120B
IGBT 1200V 40A 190W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGP20N120B is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 100 A. It features a maximum power dissipation of 190 W and a low on-state voltage of 3.4 V at 15 V gate-emitter voltage and 20 A collector current. The device exhibits a gate charge of 72 nC and typical switching times of 25 ns turn-on and 150 ns turn-off under specified test conditions. With a wide operating temperature range from -55°C to 150°C, the IXGP20N120B is housed in a standard TO-220-3 package suitable for through-hole mounting. This IGBT is commonly utilized in industrial motor control, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 20A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/150ns |
| Switching Energy | 2.1mJ (off) |
| Test Condition | 960V, 20A, 10Ohm, 15V |
| Gate Charge | 72 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 190 W |
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