IXGP20N120A3
IGBT 1200V 40A 180W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGP20N120A3 is a 1200V, 40A insulated gate bipolar transistor (IGBT) designed for high-power switching applications. This PT IGBT features a continuous collector current of 40A and a pulsed collector current of 120A, with a maximum power dissipation of 180W. The device exhibits a low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 20A collector current, and a typical gate charge of 50 nC. Switching performance is characterized by an on-time of 16ns and an off-time of 290ns at 25°C, with switching energies of 2.85mJ (on) and 6.47mJ (off) under specified test conditions. Packaged in a TO-220-3 through-hole configuration, the IXGP20N120A3 is suitable for industrial automation, renewable energy systems, and power supply applications. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/290ns |
| Switching Energy | 2.85mJ (on), 6.47mJ (off) |
| Test Condition | 960V, 20A, 10Ohm, 15V |
| Gate Charge | 50 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 180 W |
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