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IXGP16N60C2D1

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IXGP16N60C2D1

IGBT 600V 40A 150W TO220

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS HiPerFAST™ IXGP16N60C2D1 is a 600V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. This PT IGBT features a maximum collector current of 40A and a pulsed collector current of 100A, with a low on-state voltage of 3V at 15V gate-emitter voltage and 12A collector current. The device offers fast switching speeds, characterized by a turn-on delay of 16ns and turn-off delay of 75ns at 25°C, with associated switching energies of 160µJ (turn-on) and 90µJ (turn-off) under test conditions of 400V, 12A, 22 Ohm, and 15V. The gate charge is rated at 25 nC. This component is packaged in a TO-220-3 through-hole configuration and operates within a temperature range of -55°C to 150°C. The IXGP16N60C2D1 is suitable for use in power conversion systems, motor drives, and industrial power supplies.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)30 ns
Vce(on) (Max) @ Vge, Ic3V @ 15V, 12A
Supplier Device PackageTO-220-3
IGBT TypePT
Td (on/off) @ 25°C16ns/75ns
Switching Energy160µJ (on), 90µJ (off)
Test Condition400V, 12A, 22Ohm, 15V
Gate Charge25 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)100 A
Power - Max150 W

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