IXGP16N60C2D1
IGBT 600V 40A 150W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IXGP16N60C2D1 is a 600V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency switching applications. This PT IGBT features a maximum collector current of 40A and a pulsed collector current of 100A, with a low on-state voltage of 3V at 15V gate-emitter voltage and 12A collector current. The device offers fast switching speeds, characterized by a turn-on delay of 16ns and turn-off delay of 75ns at 25°C, with associated switching energies of 160µJ (turn-on) and 90µJ (turn-off) under test conditions of 400V, 12A, 22 Ohm, and 15V. The gate charge is rated at 25 nC. This component is packaged in a TO-220-3 through-hole configuration and operates within a temperature range of -55°C to 150°C. The IXGP16N60C2D1 is suitable for use in power conversion systems, motor drives, and industrial power supplies.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/75ns |
| Switching Energy | 160µJ (on), 90µJ (off) |
| Test Condition | 400V, 12A, 22Ohm, 15V |
| Gate Charge | 25 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 150 W |
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