IXGP16N60C2
IGBT 600V 40A 150W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IXGP16N60C2 is a 600V, 40A insulated gate bipolar transistor (IGBT) designed for high-efficiency power switching applications. Featuring a PT IGBT type with standard input, this component offers a maximum continuous collector current (Ic) of 40A and a pulsed collector current (Icm) of 100A. The Vce(on) is rated at 3V maximum at 15V Vge and 12A Ic, with a collector-emitter breakdown voltage of 600V. This device boasts low switching energy with typical values of 160µJ (on) and 90µJ (off) at 400V, 12A, 22 Ohm, 15V test conditions, and corresponding turn-on/off delays of 16ns/75ns. With a power dissipation of 150W and a gate charge of 25nC, it is packaged in a TO-220-3 through-hole configuration. Operating temperature range is from -55°C to 150°C. This IGBT is suitable for use in power supplies, motor drives, and industrial automation.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/75ns |
| Switching Energy | 160µJ (on), 90µJ (off) |
| Test Condition | 400V, 12A, 22Ohm, 15V |
| Gate Charge | 25 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 150 W |
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