IXGP16N60B2D1
IGBT 600V 40A 150W TO220Manufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT IXGP16N60B2D1 is a 600V, 40A insulated gate bipolar transistor in a TO-220-3 package. This PT IGBT features a low Vce(on) of 1.95V at 15V gate-emitter voltage and 12A collector current. With a pulsed collector current capability of 100A and a maximum power dissipation of 150W, it is designed for high-efficiency switching applications. The IXGP16N60B2D1 exhibits fast switching characteristics with turn-on delay (Td(on)) of 18ns and turn-off delay (Td(off)) of 73ns at 25°C, along with low switching energies of 160µJ (on) and 120µJ (off). The device operates across a wide temperature range of -55°C to 150°C (TJ). This component is suitable for use in power supplies, motor control, and industrial applications requiring robust and efficient power switching.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 18ns/73ns |
| Switching Energy | 160µJ (on), 120µJ (off) |
| Test Condition | 400V, 12A, 22Ohm, 15V |
| Gate Charge | 24 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 150 W |
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