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IXGP16N60B2D1

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IXGP16N60B2D1

IGBT 600V 40A 150W TO220

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS HiPerFAST™ IGBT IXGP16N60B2D1 is a 600V, 40A insulated gate bipolar transistor in a TO-220-3 package. This PT IGBT features a low Vce(on) of 1.95V at 15V gate-emitter voltage and 12A collector current. With a pulsed collector current capability of 100A and a maximum power dissipation of 150W, it is designed for high-efficiency switching applications. The IXGP16N60B2D1 exhibits fast switching characteristics with turn-on delay (Td(on)) of 18ns and turn-off delay (Td(off)) of 73ns at 25°C, along with low switching energies of 160µJ (on) and 120µJ (off). The device operates across a wide temperature range of -55°C to 150°C (TJ). This component is suitable for use in power supplies, motor control, and industrial applications requiring robust and efficient power switching.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)30 ns
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 12A
Supplier Device PackageTO-220-3
IGBT TypePT
Td (on/off) @ 25°C18ns/73ns
Switching Energy160µJ (on), 120µJ (off)
Test Condition400V, 12A, 22Ohm, 15V
Gate Charge24 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)100 A
Power - Max150 W

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