IXGP12N60B
IGBT 600V 24A 100W TO220ABManufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT IXGP12N60B is a robust power semiconductor device designed for demanding applications. This TO-220-3 packaged IGBT features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 24 A, with a pulsed capability of 48 A. The device exhibits a low on-state voltage of 2.1 V at 15 V gate-emitter voltage and 12 A collector current, complemented by a gate charge of 32 nC. With a maximum power dissipation of 100 W and a broad operating temperature range of -55°C to 150°C, the IXGP12N60B is suitable for power conversion, motor drives, and industrial applications. Switching performance is characterized by typical turn-on delay of 20 ns and turn-off delay of 150 ns at 25°C, with switching energy specified at 500 µJ (off) under test conditions of 480 V, 12 A, 18 Ohm, and 15 V.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/150ns |
| Switching Energy | 500µJ (off) |
| Test Condition | 480V, 12A, 18Ohm, 15V |
| Gate Charge | 32 nC |
| Current - Collector (Ic) (Max) | 24 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 48 A |
| Power - Max | 100 W |
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