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IXGP12N60B

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IXGP12N60B

IGBT 600V 24A 100W TO220AB

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS HiPerFAST™ IGBT IXGP12N60B is a robust power semiconductor device designed for demanding applications. This TO-220-3 packaged IGBT features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 24 A, with a pulsed capability of 48 A. The device exhibits a low on-state voltage of 2.1 V at 15 V gate-emitter voltage and 12 A collector current, complemented by a gate charge of 32 nC. With a maximum power dissipation of 100 W and a broad operating temperature range of -55°C to 150°C, the IXGP12N60B is suitable for power conversion, motor drives, and industrial applications. Switching performance is characterized by typical turn-on delay of 20 ns and turn-off delay of 150 ns at 25°C, with switching energy specified at 500 µJ (off) under test conditions of 480 V, 12 A, 18 Ohm, and 15 V.

Additional Information

Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 12A
Supplier Device PackageTO-220-3
IGBT Type-
Td (on/off) @ 25°C20ns/150ns
Switching Energy500µJ (off)
Test Condition480V, 12A, 18Ohm, 15V
Gate Charge32 nC
Current - Collector (Ic) (Max)24 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)48 A
Power - Max100 W

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