IXGP12N120A3
IGBT 1200V 22A 100W TO220Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGP12N120A3 is a GenX3™ series Insulated Gate Bipolar Transistor (IGBT) with a 1200V collector-emitter breakdown voltage. This through-hole component, packaged in a TO-220-3, offers a continuous collector current of 22A (60A pulsed) and a maximum power dissipation of 100W. Featuring a standard input type and a gate charge of 20.4 nC, the IXGP12N120A3 exhibits a Vce(on) of 3V at 15V gate-source voltage and 12A collector current. It operates across a wide temperature range of -55°C to 150°C. This device is suitable for applications in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 20.4 nC |
| Current - Collector (Ic) (Max) | 22 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 100 W |
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