IXGP12N100AU1
IGBT 1000V 24A 100W TO220ABManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGP12N100AU1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 1000 V collector-emitter breakdown voltage and a continuous collector current capability of 24 A, with a pulsed current rating of 48 A. The device exhibits a low on-state voltage of 4 V at 15 V gate-emitter voltage and 12 A collector current, with a maximum power dissipation of 100 W. Key switching characteristics at 800 V, 12 A, and 15 V gate drive include a gate charge of 65 nC, turn-on delay of 100 ns, turn-off delay of 850 ns, and a reverse recovery time of 60 ns. The IXGP12N100AU1 is housed in a standard TO-220-3 package, suitable for through-hole mounting and operating across a temperature range of -55°C to 150°C. This component is utilized in industries such as industrial motor control, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/850ns |
| Switching Energy | 4mJ (off) |
| Test Condition | 800V, 12A, 120Ohm, 15V |
| Gate Charge | 65 nC |
| Current - Collector (Ic) (Max) | 24 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 48 A |
| Power - Max | 100 W |
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