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IXGP12N100AU1

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IXGP12N100AU1

IGBT 1000V 24A 100W TO220AB

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

The IXYS IXGP12N100AU1 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 1000 V collector-emitter breakdown voltage and a continuous collector current capability of 24 A, with a pulsed current rating of 48 A. The device exhibits a low on-state voltage of 4 V at 15 V gate-emitter voltage and 12 A collector current, with a maximum power dissipation of 100 W. Key switching characteristics at 800 V, 12 A, and 15 V gate drive include a gate charge of 65 nC, turn-on delay of 100 ns, turn-off delay of 850 ns, and a reverse recovery time of 60 ns. The IXGP12N100AU1 is housed in a standard TO-220-3 package, suitable for through-hole mounting and operating across a temperature range of -55°C to 150°C. This component is utilized in industries such as industrial motor control, power supplies, and welding equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)60 ns
Vce(on) (Max) @ Vge, Ic4V @ 15V, 12A
Supplier Device PackageTO-220-3
IGBT Type-
Td (on/off) @ 25°C100ns/850ns
Switching Energy4mJ (off)
Test Condition800V, 12A, 120Ohm, 15V
Gate Charge65 nC
Current - Collector (Ic) (Max)24 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector Pulsed (Icm)48 A
Power - Max100 W

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