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IXGN200N170

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IXGN200N170

IGBT

Manufacturer: IXYS

Categories: Single IGBTs

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The IXYS IXGN200N170 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a robust 1700 V collector-emitter breakdown voltage and a continuous collector current rating of 280 A, with a pulsed capability of 1050 A. Rated at 1250 W maximum power dissipation, it is housed in a SOT-227B (miniBLOC) package for efficient chassis mounting. Key electrical parameters include a gate charge of 540 nC, an on-state voltage drop (Vce(on)) of 2.6V at 15V gate-emitter voltage and 100A collector current, and switching times (Td(on)/off)) of 37ns/320ns at 25°C. Reverse recovery time (trr) is specified at 133 ns. This IGBT is suitable for applications in industrial motor drives, power supplies, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)133 ns
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 100A
Supplier Device PackageSOT-227B
IGBT Type-
Td (on/off) @ 25°C37ns/320ns
Switching Energy28mJ (on), 30mJ (off)
Test Condition850V, 100A, 1Ohm, 15V
Gate Charge540 nC
Current - Collector (Ic) (Max)280 A
Voltage - Collector Emitter Breakdown (Max)1700 V
Current - Collector Pulsed (Icm)1050 A
Power - Max1250 W

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