IXGM30N60
IGBT 600V 50A 200W TO-204AEManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGM30N60 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This through-hole component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 50A, with a pulsed capability of 100A. With a maximum power dissipation of 200W and a low on-state voltage of 2.5V at 15V gate-emitter voltage and 30A collector current, it offers efficient power switching. The 180nC gate charge and typical turn-on/turn-off delays of 100ns/500ns ensure fast switching performance. Its TO-204AE package facilitates robust thermal management, operating across a wide temperature range from -55°C to 150°C. This device is commonly employed in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | TO-204AE |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/500ns |
| Switching Energy | - |
| Gate Charge | 180 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 200 W |
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