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IXGM25N100A

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IXGM25N100A

IGBT 1000V 50A 200W TO204AE

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXGM25N100A is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for robust power switching applications. This single IGBT component features a 1000V collector-emitter breakdown voltage and a continuous collector current rating of 50A, with a pulsed capability of 100A. The device dissipates up to 200W and is packaged in a TO-204AE through-hole mounting configuration. Key performance parameters include a Vce(on) of 4V at 15V gate-emitter voltage and 25A collector current, a gate charge of 180 nC, and a switching energy of 5mJ (off) under test conditions of 800V, 25A, 33 Ohms, and 15V. The IXGM25N100A is suitable for demanding applications within industrial power conversion, motor control, and high-voltage power supplies. It operates within an extended temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-204AE
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)200 ns
Vce(on) (Max) @ Vge, Ic4V @ 15V, 25A
Supplier Device PackageTO-204AE
IGBT Type-
Td (on/off) @ 25°C100ns/500ns
Switching Energy5mJ (off)
Test Condition800V, 25A, 33Ohm, 15V
Gate Charge180 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector Pulsed (Icm)100 A
Power - Max200 W

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