IXGM25N100A
IGBT 1000V 50A 200W TO204AEManufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS IXGM25N100A is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for robust power switching applications. This single IGBT component features a 1000V collector-emitter breakdown voltage and a continuous collector current rating of 50A, with a pulsed capability of 100A. The device dissipates up to 200W and is packaged in a TO-204AE through-hole mounting configuration. Key performance parameters include a Vce(on) of 4V at 15V gate-emitter voltage and 25A collector current, a gate charge of 180 nC, and a switching energy of 5mJ (off) under test conditions of 800V, 25A, 33 Ohms, and 15V. The IXGM25N100A is suitable for demanding applications within industrial power conversion, motor control, and high-voltage power supplies. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 25A |
| Supplier Device Package | TO-204AE |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/500ns |
| Switching Energy | 5mJ (off) |
| Test Condition | 800V, 25A, 33Ohm, 15V |
| Gate Charge | 180 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 200 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXYK140N90C3
IGBT 900V 310A 1630W TO264
