IXGM20N60A
IGBT 600V 40A TO-204AEManufacturer: IXYS
Categories: Single IGBTs
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IXYS IXGM20N60A is a 600V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a maximum continuous collector current of 40A, with a pulsed capability of 80A. The collector-emitter voltage (Vce) on-state is specified at 3V maximum at 15V gate-emitter voltage and 20A collector current. With a maximum power dissipation of 150W, it is suitable for demanding environments operating from -55°C to 150°C. The TO-204AE package facilitates through-hole mounting. Key switching parameters include a gate charge of 120 nC, with typical on and off switching energies of 2mJ, and turn-on/off delays of 100ns/600ns at 25°C. This component is commonly utilized in industrial power conversion, motor control, and power supply systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A |
| Supplier Device Package | TO-204AE |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/600ns |
| Switching Energy | 2mJ (on), 2mJ (off) |
| Test Condition | 480V, 20A, 82Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 150 W |
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