Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

Single IGBTs

IXGM20N60

Banner
productimage

IXGM20N60

IGBT 600V 40A TO-204AE

Manufacturer: IXYS

Categories: Single IGBTs

Quality Control: Learn More

IXYS IXGM20N60 is a 600 V, 40 A Insulated Gate Bipolar Transistor (IGBT) available in a TO-204AE package. This through-hole component offers a maximum continuous collector current of 40 A and a pulsed collector current of 80 A. Key specifications include a gate charge of 120 nC and a collector-emitter saturation voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 20A collector current. The device exhibits switching energies of 2mJ (turn-on) and 3.2mJ (turn-off) at a test condition of 480V, 20A, 82 Ohm, and 15V. Operating temperature ranges from -55°C to 150°C (TJ). The IXGM20N60 is suitable for applications in power switching and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-204AE
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)200 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Supplier Device PackageTO-204AE
IGBT Type-
Td (on/off) @ 25°C100ns/600ns
Switching Energy2mJ (on), 3.2mJ (off)
Test Condition480V, 20A, 82Ohm, 15V
Gate Charge120 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max150 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IXA20I1200PZ-TUB

DISC IGBT XPT-GENX3 TO-263D2

product image
IXYK140N90C3

IGBT 900V 310A 1630W TO264

product image
IXLF19N250A

IGBT 2500V 32A 250W I4PAC