IXGM17N100A
IGBT 1000V 34A 150W TO204AEManufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGM17N100A is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1000 V collector-emitter breakdown voltage and a continuous collector current rating of 34 A, with a pulsed capability of 68 A. Its robust design supports a maximum power dissipation of 150 W. The IXGM17N100A offers a low on-state voltage of 4V at 15V gate-source voltage and 17A collector current, with a typical gate charge of 120 nC. It is supplied in a TO-204AE package for through-hole mounting, operating within a temperature range of -55°C to 150°C. This device is suitable for use in power factor correction, uninterruptible power supplies, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 17A |
| Supplier Device Package | TO-204AE |
| IGBT Type | - |
| Td (on/off) @ 25°C | 100ns/500ns |
| Switching Energy | 3mJ (off) |
| Test Condition | 800V, 17A, 82Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 34 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 68 A |
| Power - Max | 150 W |
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