IXGL75N250
IGBT 2500V 110A ISOPLUSI5Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
The IXYS IXGL75N250 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This discrete component offers a significant 2500 V collector-emitter breakdown voltage and a continuous collector current capability of 110 A, with a pulsed capability of 580 A. The device dissipates up to 430 W and features a low on-state voltage of 2.9 V at 15 V gate-emitter voltage and 75 A collector current. With a gate charge of 410 nC, it is suitable for high-frequency switching. The IXGL75N250 is housed in an ISOPLUSi5-Pak™ package, designed for through-hole mounting to facilitate robust thermal management. Its operating temperature range is -55°C to 150°C (TJ). This IGBT finds application in industries such as industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 75A |
| Supplier Device Package | ISOPLUSi5-Pak™ |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 410 nC |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
| Current - Collector Pulsed (Icm) | 580 A |
| Power - Max | 430 W |
Request a Quote
Clients Also Buy
IXA20I1200PZ-TUB
DISC IGBT XPT-GENX3 TO-263D2
IXGB75N60BD1
IGBT 600V 120A 360W PLUS264
IXGA48N60A3-TRL
IXGA48N60A3 TRL
