IXGK82N120B3
IGBT 1200V 230A 1250W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGK82N120B3 is a 1200V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This PT IGBT features a continuous collector current capability of 230A (500A pulsed) and a maximum power dissipation of 1250W. With a Vce(on) of 3.2V at 15V gate-emitter voltage and 82A collector current, it offers efficient operation. The device exhibits typical switching times of 30ns turn-on and 210ns turn-off at 25°C under test conditions of 600V, 80A, 2 Ohms, and 15V. Its high breakdown voltage and robust construction make it suitable for use in industrial motor drives, power supplies, and welding equipment. The IXGK82N120B3 is packaged in a TO-264-3 through-hole package, allowing for straightforward integration into demanding circuit designs. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 82A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 30ns/210ns |
| Switching Energy | 5mJ (on), 3.3mJ (off) |
| Test Condition | 600V, 80A, 2Ohm, 15V |
| Gate Charge | 350 nC |
| Current - Collector (Ic) (Max) | 230 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 500 A |
| Power - Max | 1250 W |
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