IXGK82N120A3
IGBT 1200V 260A 1250W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS IXGK82N120A3 from the GenX3™ series is a 1200V, 260A Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 1250W. This PT IGBT features a TO-264 package, designed for through-hole mounting. Key electrical specifications include a collector current of 260A (580A pulsed), a gate charge of 340 nC, and a collector-emitter saturation voltage (Vce(on)) of 2.05V at 15V gate-emitter voltage and 82A collector current. Switching characteristics are defined by an on-time of 34ns and an off-time of 265ns at 25°C, with switching energies of 5.5mJ (on) and 12.5mJ (off) under test conditions of 600V, 80A, 2 Ohms, and 15V. The device operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in industrial motor drives and power supply systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 82A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 34ns/265ns |
| Switching Energy | 5.5mJ (on), 12.5mJ (off) |
| Test Condition | 600V, 80A, 2Ohm, 15V |
| Gate Charge | 340 nC |
| Current - Collector (Ic) (Max) | 260 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 580 A |
| Power - Max | 1250 W |
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