IXGK72N60B3H1
IGBT 600V 75A 540W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGK72N60B3H1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This PT IGBT features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of up to 450A. It offers a low on-state voltage of 1.8V at 15V gate-source voltage and 60A collector current, contributing to efficient power handling with a maximum power dissipation of 540W. The device exhibits typical switching times of 31ns turn-on and 152ns turn-off at 25°C, with a gate charge of 225 nC. The IXGK72N60B3H1 is housed in a TO-264-3 package, suitable for through-hole mounting and operating across a temperature range of -55°C to 150°C. This component is widely utilized in industrial automation, motor drives, and power supply systems.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 140 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 60A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 31ns/152ns |
| Switching Energy | 1.4mJ (on), 1mJ (off) |
| Test Condition | 480V, 50A, 3Ohm, 15V |
| Gate Charge | 225 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 450 A |
| Power - Max | 540 W |
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