IXGK64N60B3D1
IGBT 600V 460W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS GenX3™ IXGK64N60B3D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This PT IGBT boasts a 600V collector-emitter breakdown voltage, with a maximum on-state voltage (Vce(on)) of 1.8V at 15V gate-emitter voltage and 50A collector current. It offers a substantial continuous collector current capability of 50A, with a pulsed collector current (Icm) of 400A. With a maximum power dissipation of 460W, this device is suitable for high-power switching in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment. Key switching characteristics include a gate charge of 168 nC, a typical turn-on delay (Td(on)) of 25ns, and a reverse recovery time (trr) of 35 ns, all measured under specific test conditions (480V, 50A, 3 Ohm, 15V). The IXGK64N60B3D1 is presented in a TO-264-3, TO-264AA package, facilitating through-hole mounting. Its operating temperature range spans from -55°C to 150°C (TJ).
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 25ns/138ns |
| Switching Energy | 1.5mJ (on), 1mJ (off) |
| Test Condition | 480V, 50A, 3Ohm, 15V |
| Gate Charge | 168 nC |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 460 W |