IXGK60N60B2D1
IGBT 600V 75A 500W TO264Manufacturer: IXYS
Categories: Single IGBTs
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The IXYS HiPerFAST™ IXGK60N60B2D1 is a 600V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This PT IGBT features a maximum collector power dissipation of 500W and a pulsed collector current of 300A. With a typical gate charge of 170 nC and a low on-state voltage of 1.8V at 15V gate-emitter voltage and 50A collector current, it offers efficient switching. The TO-264 package facilitates through-hole mounting for robust thermal management. Key parameters include a reverse recovery time of 35ns and switching energy of 1mJ (off) under specified test conditions. Operating temperatures range from -55°C to 150°C. This component is suitable for demanding applications in industries such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 28ns/160ns |
| Switching Energy | 1mJ (off) |
| Test Condition | 400V, 50A, 3.3Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 500 W |
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