IXGK55N120A3H1
IGBT 1200V 125A 460W TO264Manufacturer: IXYS
Categories: Single IGBTs
Quality Control: Learn More
IXYS GenX3™ series IXGK55N120A3H1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This PT IGBT features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 125 A, with a pulsed rating of 400 A. The device dissipates up to 460 W and has a low on-state voltage (Vce(on)) of 2.3 V at 15 V gate-emitter voltage and 55 A collector current. Switching characteristics include an on-state delay (Td(on)) of 23 ns and an off-state delay (Td(off)) of 365 ns at 25°C, along with a reverse recovery time (trr) of 200 ns. Gate charge is specified at 185 nC. The IXGK55N120A3H1 is housed in a TO-264 package, suitable for through-hole mounting and operates across a junction temperature range of -55°C to 150°C. This component is utilized in power conversion systems, motor drives, and industrial power supplies.
Additional Information
Series: GenX3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 57 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 55A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 23ns/365ns |
| Switching Energy | 5.1mJ (on), 13.3mJ (off) |
| Test Condition | 960V, 55A, 3Ohm, 15V |
| Gate Charge | 185 nC |
| Current - Collector (Ic) (Max) | 125 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 460 W |
Request a Quote
Clients Also Buy
IXGA48N60A3-TRL
IXGA48N60A3 TRL
IXGK120N120A3
IGBT PT 1200V 240A TO264
IXGH30N60C3D1
IGBT 600V 60A 220W TO247
