IXGK50N60BD1
IGBT 600V 75A 300W TO264AAManufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT IXGK50N60BD1 is a 600V, 75A N-channel insulated gate bipolar transistor designed for high-efficiency power switching applications. This component features a low Vce(on) of 2.3V at 15V gate drive and 50A collector current, minimizing conduction losses. Its robust design supports a continuous collector current of 75A and a pulsed current capability of 200A. The device boasts a maximum power dissipation of 300W and a Tj of 150°C, ensuring reliable operation in demanding environments. Key switching parameters include a gate charge of 110nC and switching times of 50ns (td(on)) and 200ns (td(off)) at 25°C, with an energy loss of 1.5mJ (Eoff). The IXGK50N60BD1 is housed in a TO-264AA package, suitable for through-hole mounting. This IGBT is commonly utilized in industrial motor control, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 50A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/200ns |
| Switching Energy | 1.5mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 110 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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