IXGK50N60AU1
IGBT 600V 75A 300W TO264AAManufacturer: IXYS
Categories: Single IGBTs
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IXYS HiPerFAST™ IGBT IXGK50N60AU1 is a high-performance insulated gate bipolar transistor designed for demanding power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 75 A, with a pulsed capability of 200 A. The IXGK50N60AU1 offers a maximum power dissipation of 300 W and a low on-state voltage (Vce(on)) of 2.7 V at 15 V gate-emitter voltage and 50 A collector current. Key switching parameters include a gate charge of 200 nC and a reverse recovery time (trr) of 50 ns, with typical turn-on and turn-off delays of 50 ns and 200 ns respectively at 25°C. The device is housed in a TO-264AA package for through-hole mounting, operating across a temperature range of -55°C to 150°C. This IGBT is suitable for applications in industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: HiPerFAST™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 50 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A |
| Supplier Device Package | TO-264 (IXGK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/200ns |
| Switching Energy | 4.8mJ (off) |
| Test Condition | 480V, 50A, 2.7Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 300 W |
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